inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon pnp power transistor BD950 description collector-emitter breakdown voltage- : v (br)ceo = -60v(min) dc current gain- : h fe = 40(min)@ i c = -500ma complement to type bd949 applications designed for power amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v oltage -60 v v ceo collector-emitter v oltage -60 v v ebo emitter-base voltage -5 v i c collector current-continuous -5 a i cm collector current-peak -8 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.12 /w r th j-a thermal resistance,junction to ambient 70 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon pnp power transistor BD950 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -1ma ; i b = 0 -60 v v (br)cbo collector-base breakdown v oltage i c = -1ma ; i e = 0 -60 v v (br)ebo emitter-base breakdown voltage i e = -1ma ; i c = 0 -5 v v ce( sat ) collector-emitter saturation voltage i c = -2a; i b = -0.2a -1.0 v v be( on ) base-emitter on voltage i c = -2a; v ce = -4v -1.4 v i cbo collector cutoff current v cb = -60v; i e = 0 -50 a v cb = -30v; i e = 0,t j =150 -1.0 ma i ceo collector cutoff current v ce = -30v; i b = 0 -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.2 ma h fe-1 dc current gain i c = -500ma ; v ce = -4v 40 h fe-2 dc current gain i c = -2a ; v ce = -4v 20 f t current-gainbandwidth product i c = -500ma ; v ce = -4v 3 mhz switching times t on turn-on time i c = -1.0a; i b1 = -i b2 = -0.1a; v cc = -20v; r l = 20 0.1 s t off turn-off time 0.4 s
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